preferred device complementar y power t ransistors dp ak for surface mount applications designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. features ? pb?free packages are a vailable ? lead formed for surface mount application in plastic sleeves (no suf fix) ? straight lead v ersion in plastic sleeves (a?1o suf fix) ? lead formed v ersion in 16 mm t ape and reel for surface mount (at4o suf fix) ? electrically similar to popular d44h/d45h series ? low collector emitter saturation v oltage ? v ce(sat) = 1.0 v olt max @ 8.0 amperes ? fast switching speeds ? complementary pairs simplifies designs ? epoxy meets ul 94, v?0 @ 0.125 in ? esd ratings: human body model, 3b 8000 v machine model, c 400 v maximum ra tings rating symbol max unit collector?emitter voltage v ceo 80 vdc emitter?base voltage v eb 5 vdc collector current ? continuous peak i c 8 16 adc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c total power dissipation* @ t a = 25 c derate above 25 c p d 1.75 0.014 w w/ c operating and storage junction temperature range t j , t stg ?55 to + 150 c maximum ratings are those values beyond which device damage can occur . maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously . if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be af fected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 6.25 c/w thermal resistance, junction?to?ambient* r ja 71.4 c/w lead temperature for soldering t l 260 c *these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transist ors 8 amperes 80 vol ts 20 w a tts dp ak?3 case 369d style 1 dp ak case 369c style 1 marking diagrams y = y ear ww = w ork w eek x = 4 or 5 1 2 3 4 yww j4 xh11 1 2 3 4 yww j4 xh11 4h11g(npn) 5H11G(pnp) http://
4h11 (npn) 5h11 (pnp) ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ????????????????????? ????????????????????? characteristic ????? ????? symbol ??? ??? min ??? ??? typ ??? ??? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ????????????????????? ? ??????????????????? ? ????????????????????? collector?emitter sustaining v oltage (i c = 30 ma, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 80 ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??? ? ? ? ??? vdc ????????????????????? ? ??????????????????? ? ????????????????????? collector cutof f current (v ce = rated v ceo , v be = 0) ????? ? ??? ? ????? i ces ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??? ? ? ? ??? 10 ??? ? ? ? ??? a ????????????????????? ? ??????????????????? ? ????????????????????? emitter cutof f current (v eb = 5 vdc) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??? ? ? ? ??? 50 ??? ? ? ? ??? a ????????????????????????????????? ????????????????????????????????? on characteristics ????????????????????? ????????????????????? collector?emitter saturation v oltage (i c = 8 adc, i b = 0.4 adc) ????? ????? v ce(sat) ??? ??? ? ??? ??? ? ??? ??? 1 ??? ??? vdc ????????????????????? ? ??????????????????? ? ????????????????????? base?emitter saturation v oltage (i c = 8 adc, i b = 0.8 adc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??? ? ? ? ??? 1.5 ??? ? ? ? ??? vdc ????????????????????? ? ??????????????????? ? ????????????????????? dc current gain (v ce = 1 vdc, i c = 2 adc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 60 ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??? ? ? ? ??? ? ????????????????????? ? ??????????????????? ? ????????????????????? dc current gain (v ce = 1 vdc, i c = 4 adc) ????? ? ??? ? ????? ??? ? ? ? ??? 40 ??? ? ? ? ??? ? ??? ? ? ? ??? ? ??? ? ? ? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ????????????????????? ? ??????????????????? ? ????????????????????? collector capacitance (v cb = 10 vdc, f test = 1 mhz) mjd44h1 1 mjd45h11 ????? ? ??? ? ????? c cb ??? ? ? ? ??? ? ? ??? ? ? ? ??? 130 230 ??? ? ? ? ??? ? ? ??? ? ? ? ??? pf ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? gain bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 20 mhz) mjd44h1 1 mjd45h11 ????? ? ??? ? ? ??? ? ????? f t ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? 50 40 ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? mhz ????????????????????????????????? ????????????????????????????????? switching times ????????????????????? ? ??????????????????? ? ????????????????????? delay and rise t imes (i c = 5 adc, i b1 = 0.5 adc) mjd44h1 1 mjd45h11 ????? ? ??? ? ????? t d + t r ??? ? ? ? ??? ? ? ??? ? ? ? ??? 300 135 ??? ? ? ? ??? ? ? ??? ? ? ? ??? ns ????????????????????? ? ??????????????????? ? ? ??????????????????? ? ????????????????????? storage t ime (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjd44h1 1 mjd45h11 ????? ? ??? ? ? ??? ? ????? t s ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? 500 500 ??? ? ? ? ? ? ? ??? ? ? ??? ? ? ? ? ? ? ??? ns ????????????????????? ? ??????????????????? ? ????????????????????? fall t ime (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjd44h1 1 mjd45h11 ????? ? ??? ? ????? t f ??? ? ? ? ??? ? ? ??? ? ? ? ??? 140 100 ??? ? ? ? ??? ? ? ??? ? ? ? ??? ns
4h11 (npn) 5h11 (pnp) 4 t, time (ms) 1 0.01 1 k 0.3 0.2 0.07 r(t) , effective transient thermal r jc(t) = r(t) r jc r jc = 6.25 c/w max d cur ves appl y for power pulse train shown read time a t t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 resist ance (normalized) 0.7 figure 1. thermal response 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 single pulse d = 0.5 0.1 0.02 0.01 0.05 i c , collector current (amp) 20 1 v ce , collector-emitter voltage (volts) 0.02 3 100 2 0.5 5 0.1 thermal limit @ t c = 25 c wire bond limit 5 7 20 70 10 100 s dc 0.05 0.3 1 3 10 50 30 figure 2. maximum forward bias safe operating area 1ms 500 s 5ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 1. a t high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissip a tion (w a tts) 2.5 0 2 1.5 1 0.5 t a t c figure 3. power derating t c t a surf ace mount
4h11 (npn) 5h11 (pnp) 5 i c , collect or current (amps) i c , collector current (amps) i c , collect or current (amps) h fe , dc current gain v ce = 4 v t j = 125 c 25 c -40 c 1000 0.1 figure 4. 4h11 dc current gain 10 11 0 100 figure 5. 5h11 dc current gain figure 6. 4h11 current gain versus t emperature figure 7. 5h11 current gain versus t emperature i c /i b = 10 t j = 25 c 0.1 figure 8. 4h11 on?voltages i c , collect or current (amps) 1 0.8 sa tura tion vol t age (vol ts) 1.2 0.4 0 0.6 0.2 11 0 t j = 25 c figure 9. 5h11 on?voltages v ce = 1 v i c /i b = 10 t j = 25 c 0.1 i c , collector current (amps) 1 0.8 sa tura tion vol t age (vol ts) 1.2 0.4 0 0.6 0.2 1 10 h fe , dc current gain 1000 0.1 10 11 0 100 v ce = 1 v i c , collect or current (amps) h fe , dc current gain v ce = 4 v 1000 0.1 10 11 0 100 t j = 25 c 1 v t j = 125 c 25 c -40 c h fe , dc current gain 1000 0.1 10 11 0 100 v ce = 1 v v be(sat) v ce(sat) v be(sat) v ce(sat)
4h11 (npn) 5h11 (pnp) 6 p ackage dimensions dp ak case 369c issue o d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h ?t? sea ting plane z dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.1 14 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.180 0.215 4.57 5.45 s 0.025 0.040 0.63 1.01 u 0.020 ??? 0.51 ??? v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and t olerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 12 3 4 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. base 2. collector 3. emitter 4. collector
4h11 (npn) 5h11 (pnp) 7 p ackage dimensions dp ak?3 case 369d?01 issue b 12 3 4 v s a k ?t? sea ting plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and t olerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? style 1: pin 1. base 2. collector 3. emitter 4. collector
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